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DRF1402F

Features: · 4.8 Volt operation· P1dB 28 dBm @f=465MHz· Power gain 10 dB @f=465MHzApplicationHand-held radio equipment in commonemitter class-AB operation in 450 MHzcommunication band.Specifications SYMBOL PARAMETER CONDITION VALUE Unit VCBO Collector-Base Voltage Open E...

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SeekIC No. : 004328254 Detail

DRF1402F: Features: · 4.8 Volt operation· P1dB 28 dBm @f=465MHz· Power gain 10 dB @f=465MHzApplicationHand-held radio equipment in commonemitter class-AB operation in 450 MHzcommunication band.Specifications ...

DRF1402F Data Sheet

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Part Number:
DRF1402F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· 4.8 Volt operation
· P1dB 28 dBm @f=465MHz
· Power gain 10 dB @f=465MHz


Application

Hand-held radio equipment in common
emitter class-AB operation in 450 MHz
communication band.




Specifications

SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
 Collector-Base Voltage
Open Emitter
20
V
VCEO
 Collector-Emitter Voltage
Open Base
8
V
VEBO
 Emitter-Base Voltage
Open Collector
4
V
IC
 Collector Current (DC)
350
mA
PT
 Total Power Dissipation
Ts=60;note 1
1
W
TSTG
 Storage Temperature
-65~150
TJ
 Operating Junction Temperature
150



Description

The DRF1402F is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-89 SMD package. The DRF1402F can be used as a driver device or an output device, depending on the specific application




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