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DS05-20886-1E

Features: • 0.23 µm Process Technology• Single 3.0 V read, program and erase Minimizes system level power requirements• Compatible with JEDEC-standards Uses same software commands with single-power supply Flash• Address don't care during the command sequence• In...

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DS05-20886-1E: Features: • 0.23 µm Process Technology• Single 3.0 V read, program and erase Minimizes system level power requirements• Compatible with JEDEC-standards Uses same software com...

DS05-20886-1E Data Sheet

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Part Number:
DS05-20886-1E
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.23 µm Process Technology
• Single 3.0 V read, program and erase
   Minimizes system level power requirements
• Compatible with JEDEC-standards
   Uses same software commands with single-power supply Flash
• Address don't care during the command sequence
• Industry-standard pinouts
   63-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
   90 ns maximum access time
• Flexible sector architecture
   One hundred twenty-eight 32K word sectors
   Any combination of sectors can be concurrently erased. Also supports full chip erase
• Hidden ROM (Hi-ROM) region
   128 word of Hi-ROM, accessible through a new "Hi-ROM Enable" command sequence
   Factory serialized and protected to provide a secure electronic serial number (ESN)
• Ready/Busy Output (RY/ BY)
   Hardware method for detection of program or erase cycle completion
• ACC input pin
   At VACC, increases program performance
• Embedded EraseTM* Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms
   Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
   Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
   Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
   Temporary sector group unprotection via the RESET pin
   This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Min.
Max.
Storage Temperature
Tstg
55
+125
°C
Ambient Temperature with Power Applied
TA
40
+85°
°C
Voltage with Respect to Ground All Pins Except A9, OE, ACC and RESET(Note 1)
VIN, VOUT
0.5
VCC +0.5
V
Power Supply Voltage
(Note 1)
VCC
0.5
+4.0
V
A9, OE, ACC, and RESET
(Note 2
VIN
0.5
+13.0
V
Power Supply Voltage
VCCq
0.2
+7.0
V




Description

The MBM29LV652UE is entirely command set compatible with JEDEC single-power-supply Flash standard.Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.

Typically, each sector of the MBM29LV652UE  can be programmed and verified in about 0.5 seconds.

A sector of the MBM29LV652UE  is typically erased and verified in 1.0 second. (If already completely preprogrammed.)

MBM29LV652UE  also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV652UE is erased when shipped from the factory

Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode.

MBM29LV652UEs  electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words are programmed one word at a time using the EPROM programming mechanism of hot electron injection. 




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