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Part Number: DS10
Description: The MSC23136D/DL-xxBS10/DS10 is a fully decoded, 1,048,576-word x 36-bit CMOS dynamic random access me...


Description: The MSC23136D/DL-xxBS10/DS10 is a fully decoded, 1,048,576-word x 36-bit CMOS dynamic random access me...
The MSC23136D/DL-xxBS10/DS10 is a fully decoded, 1,048,576-word x 36-bit CMOS dynamic random access memory module composed of eight 4Mb DRAMs in SOJ packages and two 2Mb DRAMs in SOJ packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single-inline package. This module supports any application where high density and large capacity of storage memory are required. The MSC23136DL (the low-power version) is specially designed for lower-power applications.
| Item | Symbol | Ratings | Unit |
| Voltage on any pin relative to Vss | VIN,VOUT | -1.0 to +7.0 | V |
| Voltage on VCC Supply Relative to VSS | Vcc | -1.0 to +7.0 | V |
| Short circuit current | IOS | 50 | mA |
| Power dissipation | PD | 10 | W |
| Operating temperature | Topr | 0 to 70 | °C |
| Storage temperature | Tstg | - 40 to 125 | °C |
*: Ta=25°C
DS1000
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