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MFG:DALLAS D/C:DIP


Part Number: DS2016
MFG: DALLAS
D/C: DIP
Description: The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random accessmemory organized ...
MFG:DALLAS D/C:DIP


MFG: DALLAS
D/C: DIP
Description: The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random accessmemory organized ...
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random accessmemory organized as 2048 words by 8 bits using CMOS technology. The device operates from a singlepower supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (CE ) is used fordevice selection and can be used in order to achieve the minimum standby current mode, which facilitatesboth battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 nsaccess while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over theinput voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications wherebattery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8SRAM and is pin-compatible with ROM and EPROM of similar density.
|
SYMBOL |
PARAMETER |
RATING |
|
VCC |
Power Supply Voltage |
-0.3V to +7.0V |
|
VIN , VI/O |
Input, Input/Output Voltage |
-0.3 to VCC +0.3V |
|
TSTG |
Storage Temperature |
-55 to +125 |
|
TOPR |
Operating Temperature |
40 to +85 |
|
TSOLDER |
Soldering Temperature/Time |
260 for 10 seconds |
DS2016
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