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Part Number: DS90CR213
Description: The DS90CR213 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data s...
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DS90CR213
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DataSheet
General Description
DS90CR213 General Description
The DS90CR213 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fourth LVDS link. Every cycle of the transmit clock 21 bits of input data are sampled and transmitted. The DS90CR214 receiver converts the LVDS data streams back into 21 bits of CMOS/TTL data. At a transmit clock frequency of 66 MHz, 21 bits of TTL data are transmitted at a rate of 462 Mbps per LVDS data channel. Using a 66 MHz clock, the data throughput is 1.386 Gbit/s (173 Mbytes/s).
The multiplexing of the data lines provides a substantial cable reduction. Long distance parallel single-ended buses typically require a ground wire per active signal (and have very limited noise rejection capability). Thus, for a 21-bit wide data and one clock, up to 44 conductors are required. With the Channel Link chipset as few as 9 conductors (3 data pairs, 1 clock pair and a minimum of one ground) are needed. This provides an 80% reduction in required cable width, which provides a system cost savings, reduces connector physical size and cost, and reduces shielding requirements due to the cable's smaller form factor.
The 21 CMOS/TTL inputs can support a variety of signal combinations. For example, 5 4-bit nibbles (byte + parity) or 2 9-bit (byte + 3 parity) and 1 control.
DS90CR213 Maximum Ratings
Supply Voltage (VCC) −0.3V to +6V
CMOS/TTL Input Voltage −0.3V to (VCC + 0.3V)
CMOS/TTL Output Voltage −0.3V to (VCC + 0.3V)
LVDS Receiver Input Voltage −0.3V to (VCC + 0.3V)
LVDS Driver Output Voltage −0.3V to (VCC + 0.3V)
LVDS Output Short Circuit Duration Continuous
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering, 4 sec) +260°C
Maximum Package Power Dissipation Capacity @ 25°C
MTD48 (TSSOP) Package:
DS90CR213 1.98W
DS90CR214 1.89W
Package Derating:
DS90CR213 16 mW/°C above +25°C
DS90CR214 15 mW/°C above +25°C
CMOS/TTL Input Voltage −0.3V to (VCC + 0.3V)
CMOS/TTL Output Voltage −0.3V to (VCC + 0.3V)
LVDS Receiver Input Voltage −0.3V to (VCC + 0.3V)
LVDS Driver Output Voltage −0.3V to (VCC + 0.3V)
LVDS Output Short Circuit Duration Continuous
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering, 4 sec) +260°C
Maximum Package Power Dissipation Capacity @ 25°C
MTD48 (TSSOP) Package:
DS90CR213 1.98W
DS90CR214 1.89W
Package Derating:
DS90CR213 16 mW/°C above +25°C
DS90CR214 15 mW/°C above +25°C
DS90CR213 Features
·66 MHz Clock Support
·Up to 173 Mbytes/s bandwidth
·Low power CMOS design (<610 mW)
·Power-down mode (<0.5 mW total)
·Up to 1.386 Gbit/s data throughput
·Narrow bus reduces cable size and cost
·290 mV swing LVDS devices for low EMI
·PLL requires no external components
·Low profile 48-lead TSSOP package
·Rising edge data strobe
·Compatible with TIA/EIA-644 LVDS Standard
·Up to 173 Mbytes/s bandwidth
·Low power CMOS design (<610 mW)
·Power-down mode (<0.5 mW total)
·Up to 1.386 Gbit/s data throughput
·Narrow bus reduces cable size and cost
·290 mV swing LVDS devices for low EMI
·PLL requires no external components
·Low profile 48-lead TSSOP package
·Rising edge data strobe
·Compatible with TIA/EIA-644 LVDS Standard
DS90CR213 Connection Diagram
DS90CR213
PDF/DataSheet Download
- Datasheet: DS90CR213
- File Size: 270789 KB
- Manufacturer: NSC [National Semiconductor]
- Click here to Download
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