DS90CR216A General Description
The DS90CR286A receiver converts the four LVDS data streams (Up to 1.848 Gbps throughput or 231 Megabytes/sec bandwidth) back into parallel 28 bits of CMOS/TTL data.
Also available is the DS90CR216A that converts the three LVDS data streams (Up to 1.386 Gbps throughput or 173 Megabytes/sec bandwidth) back into parallel 21 bits of CMOS/TTL data. Both Receivers' outputs are Rising edge strobe.
This chipset is an ideal means to solve EMI and cable size problems associated with wide, high speed TTL interfaces.
DS90CR216A Maximum Ratings
Supply Voltage (VCC) −0.3V to +4V
CMOS/TTL Output Voltage −0.3V to (VCC + 0.3V)
LVDS Receiver Input Voltage −0.3V to (VCC + 0.3V)
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering, 4 sec) +260°C
Maximum Package Power Dissipation Capacity @ 25°C
MTD56 (TSSOP) Package: DS90CR286A 1.61 W
MTD48 (TSSOP) Package: DS90CR216A 1.89 W
Package Derating:
DS90CR286A 12.4 mW/°C above +25°C
DS90CR216A 15 mW/°C above +25°C
ESD Rating
(HBM, 1.5 kW, 100 pF) > 7 kV
(EIAJ, 0W, 200 pF) > 700V
DS90CR216A Features
`20 to 66 MHz shift clock support
`50% duty cycle on receiver output clock
`BestinClass Set & Hold Times on RxOUTPUTs
`Rx power consumption <270 mW (typ) @66MHz Worst Case
`Rx Power-down mode <200µW (max)
`ESD rating >7 kV (HBM), >700V (EIAJ)
`PLL requires no external components
`Compatible with TIA/EIA-644 LVDS standard
`Low profile 56-lead or 48-lead TSSOP package
`Operating Temperature: −40°C to +85°C
DS90CR216A Connection Diagram
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