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Part Number: DS9502

 

 

 

 

Description: This DS9502 was designed as an additional ESD protection for SRAMbased batterybuffered portable memory...


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DS9502 General Description


This DS9502 was designed as an additional ESD protection for SRAMbased batterybuffered portable memory modules. The memory chips used for these modules have already a strong ESDprotection structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than 27 kV (IEC 8012 Reference model). In case of abnormal ESD hits beyond its maximum ratings the DS9502 will eventually fail "short" thus preventing further damage.

During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds the trigger voltage, the I/V characteristic of the device will "snapback" allowing the same or higher amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage is maintained, the device will stay in the "snapback mode". If the voltage or the current falls below the holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a small leakage current.

DS9502 Maximum Ratings

Operating Temperature               40°C to +85°C
Storage Temperature               55°C to +125°C
Soldering Temperature         260°C for 10 seconds
Continuous DC Current Through Package      80 mA

DS9502 Features

`Zener characteristic with voltage snapback to protect against ESD hits
`High avalanche voltage, low leakage and low capacitance avoid signal attenuation
`Compatible to all 5V logic families
`Space saving, low inductance TSOC surface mount package
`Symmetric dualport bondout to maximize energy dissipation in protection device
`Industrial temperature range

DS9502 datasheet

DS9502
PDF/DataSheet Download

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