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DSP8-08AC

Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation·For single and three phase bridge configuration·Low cathode to tab capacitance (<15pF)·Planar passivated chips·Epoxy meets UL 94V-0Specifications Symbol T...

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SeekIC No. : 004329647 Detail

DSP8-08AC: Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation·For single and three phase bridge configuration·Low cathode to ...

DSP8-08AC Data Sheet

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Part Number:
DSP8-08AC
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
·For single and three phase bridge configuration
·Low cathode to tab capacitance (<15pF)
·Planar passivated chips
·Epoxy meets UL 94V-0


Specifications

Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 30 A
IFAVM TC = 85°C; rectangular, d = 0.5 2 x 11 A
IFSM
 TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine

100
105

 A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine		 85
90		 A
A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine		 50
45		 A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine		 35
30		 A2s
A2s
TVJ -40...+175 °C
TVJM 150 °C
Tstg -55...+150 °C
TL 1.6 mm (0.063 in) from case for 10 s 260 °C
Ptot TC = 25°C 2500 V~
FC Mounting Force 11...65 /2.5..15 Nm/lb.in.
Nm/lb.in.
Weight
2		 g



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