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DT70T9349L

Features: True Dual-Ported memory cells which allow simultaneousaccess of the same memory location High-speed clock to data access Commercial:7.5/9/12ns (max.) Industrial: 9ns (max.) Low-power operation IDT70T9359/49LActive: 225mW (typ.)Standby: 1.5mW (typ.) Flow-Through or Pipelined output mode ...

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DT70T9349L: Features: True Dual-Ported memory cells which allow simultaneousaccess of the same memory location High-speed clock to data access Commercial:7.5/9/12ns (max.) Industrial: 9ns (max.) Low-power oper...

DT70T9349L Data Sheet

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Part Number:
DT70T9349L
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

  True Dual-Ported memory cells which allow simultaneous
access of the same memory location
  High-speed clock to data access
Commercial:7.5/9/12ns (max.)
Industrial: 9ns (max.)
  Low-power operation
IDT70T9359/49L
Active: 225mW (typ.)
Standby: 1.5mW (typ.)
  Flow-Through or Pipelined output mode on either port via
the FT/PIPE pins
  Counter enable and reset features
  Dual chip enables allow for depth expansion without
additional logic
  Full synchronous operation on both ports
4.0ns setup to clock and 0.5ns hold on all control, data, and
address inputs
Data input, address, and control registers
Fast 7.5ns clock to data out in the Pipelined output mode
Self-timed write allows fast cycle time
12ns cycle time, 83MHz operation in Pipelined output mode
  Separate upper-byte and lower-byte controls for
multiplexed bus and bus matching compatibility
  LVTTL- compatible, single 2.5V (±100mV) power supply
  Industrial temperature range (40°C to +85°C) is
available for 66MHz
 Available in a 100-pin Thin Quad Flatpack (TQFP) and 100-
pin fine pitch Ball Grid Array (fpBGA) packages.


Pinout

Connection Diagram


Specifications

Symbol Rating Commercial
& Industrial		 Unit
VTERM(2) Terminal Voltage
with Respect to
GND		 -0.5 to +3.6 V
TBIAS Temperature
Under Bias		 -55 to +125
TSTG Storage
Temperature		 -65 to +150
IOUT DC Output Current 50 mA



Description

The IDT70T9359/49 is a high-speed 8/4K x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports.

Registers IDT70T9359/49 on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times.

With an input data register, the IDT70T9359/49 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.

Fabricated using IDT's CMOS high-performance technology, these devices IDT70T9359/49 typically operate on only 225mW of power.




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