Specifications Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation@ TA= 25°C (1.)Derate above 25°C PD 3502.81 mWmW/°CDescriptionThis new series of DTA114Tdigital tr...
DTA114T: Specifications Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation@...
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Rating | Symbol | Value | Unit |
Collector-Base Voltage | VCBO | 50 | Vdc |
Collector-Emitter Voltage | VCEO | 50 | Vdc |
Collector Current | IC | 100 | mAdc |
Total Power Dissipation @ TA= 25°C (1.) Derate above 25°C |
PD | 350 2.81 |
mW mW/°C |
This new series of DTA114T digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO92 package which is designed for through hole applications.