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DTD123ES
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DataSheet
General Description
DTD123ES Maximum Ratings
| Paramter | Symbol | limits(DTD123E) | Unit | |
| K | S | |||
| Supply voltage | Vcc | 50 | V | |
| Input voltage | VIN | -10 to +12 | V | |
| Ouput current | IO | 500 | mA | |
| Power dissipation | Pd | 200 | 300 | mW |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55 to +150 | ||
DTD123ES Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. Theyalso have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device design easy.
2) The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. Theyalso have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device design easy.
DTD123ES
PDF/DataSheet Download
- Datasheet: DTD123ES
- File Size: 62163 KB
- Manufacturer: ROHM [Rohm]
- Click here to Download
- ·DTD113E
- ROHM [Rohm]
- DIGITAL TRANSISTOR
- 155072 KB
- ·DTD113EK
- ROHM [Rohm]
- Digital transistors (built-in resistors)
- 62323 KB
- ·DTD113ES
- ROHM [Rohm]
- Digital transistors (built-in resistors)
- 62323 KB
- ·DTD113Z
- ROHM [Rohm]
- DIGITAL TRANSISTOR
- 66845 KB
- ·DTD113ZK
- ROHM [Rohm]
- Digital transistors (built-in resistors)
- 66845 KB
- ·DTD113ZS
- ROHM [Rohm]
- Digital transistors (built-in resistors)
- 66845 KB
- ·DTD113ZS3
- ETC [ETC]
- Mini size of Discrete semiconductor elements
- 512569 KB
- ·DTD113ZU
- ROHM [Rohm]
- Digital transistors (built-in resistors)
- 66845 KB
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