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DU1260T

Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Bipolar DevicesSpecifically Designed for 12 Volt ApplicationsSpecifications Parameter Symbol Rating Units Drain-Source Voltage ...

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DU1260T: Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Bipolar DevicesSpecifically Designed for 12 Volt...

DU1260T Data Sheet

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Part Number:
DU1260T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications


Specifications

Parameter

Symbol

Rating

Units

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

20

V

Drain-Source Voltage

IDS

24

A

Power Dissipation

PD

250

w

Junction Temperature

TJ

200

 

Storage Temperature

TSTG

-55to +150

 

Thermal Resistance

qjc

0.7

/w




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