EBD21RD4ADNA-E

Features: • 184-pin socket type dual in line memory module (DIMM) -PCB height: 30.48mm -Lead pitch: 1.27mm -Lead-free • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SSTL_2 compatible) I/O • Double Data Rate architecture; two data transfers per clock ...

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SeekIC No. : 004330939 Detail

EBD21RD4ADNA-E: Features: • 184-pin socket type dual in line memory module (DIMM) -PCB height: 30.48mm -Lead pitch: 1.27mm -Lead-free • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) •...

floor Price/Ceiling Price

Part Number:
EBD21RD4ADNA-E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/6

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Product Details

Description



Features:

• 184-pin socket type dual in line memory module (DIMM) 
        -PCB height:  30.48mm 
        -Lead pitch:  1.27mm 
        -Lead-free
• 2.5V power supply
• Data rate: 333Mbps/266Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per clock cycle 
• Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver 
• Data inputs and outputs are synchronized with DQS 
• 4 internal banks for concurrent operation  (Components)
• DQS is edge aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Auto precharge option for each burst access
• Programmable burst length:  2, 4, 8
• Programmable /CAS latency (CL):  2, 2.5
• Refresh cycles:  (8192 refresh cycles /64ms) 
        -7.8µs maximum average periodic refresh interval
• 2 variations of refresh 
        -Auto refresh 
        -Self refresh
• 1 piece of PLL clock driver, 1 piece of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD)



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT 1.0 to +3.6 V  
Supply voltage relative to VSS VDD 1.0 to +3.6 V  
Short circuit output current IOS 50 mA  
Power dissipation PT 18 W  
Operating ambient temperature TA 0 to +70 1
Storage temperature Tstg -55 to +125  



Description

The EBD21RD4ADNA is  a  256M  words  ×  72 bits, 2 ranks Double Data Rate  (DDR) SDRAM Module, mounting  36  pieces  of DDR SDRAM sealed in TCP package.  Read and write operations are performed at the cross points of the CK  and the /CK.   This high-speed data transfer EBD21RD4ADNA is realized by the 2-bit prefetch-pipelined architecture.   Data strobe (DQS) both for read and write are available for high speed and reliable data bus design.  By setting extended mode register, the on-chip  Delay  Locked  Loop (DLL) can be set enable or disable.   This module provides high density mounting  without utilizing surface mount  technology.  Decoupling capacitors are mounted beside each TCP on the module board.


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