EBE21FD4AJFT

PinoutDescriptionFeatures of the EBE21FD4AJFT are:(1)JEDEC standard raw card E design;(2)industry standard advanced memory buffer (AMB);(3)high-speed differential point-to-point link interface at 1.5V (JEDEC spec);(4)various features/modes;(5)channel error detection and reporting;(6)automatic DDR2...

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SeekIC No. : 004331028 Detail

EBE21FD4AJFT: PinoutDescriptionFeatures of the EBE21FD4AJFT are:(1)JEDEC standard raw card E design;(2)industry standard advanced memory buffer (AMB);(3)high-speed differential point-to-point link interface at 1....

floor Price/Ceiling Price

Part Number:
EBE21FD4AJFT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

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  Connection Diagram


Description

Features of the EBE21FD4AJFT are:(1)JEDEC standard raw card E design;(2)industry standard advanced memory buffer (AMB);(3)high-speed differential point-to-point link interface at 1.5V (JEDEC spec);(4)various features/modes;(5)channel error detection and reporting;(6)automatic DDR2 SDRAM bus and channel calibration;(7)SPD (serial presence detect) with 1piece of 256 byte serial EEPROM.

Specifications of the EBE21FD4AJFT are:(1)density is 2GB;(2)organization is 256M words * 72 bits, 2 ranks;(3)mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA;(4)power supply;(5)data rate is 667Mbps (max.);(6)four internal banks for concurrent operation (components);(7)interface is SSTL_18;(8)burst lengths (BL) is 4, 8;(9)CAS latency (CL) is 3, 4, 5;(10)precharge: auto precharge option for each burst access;(11)refresh is auto-refresh, self-refresh;(12)refresh cycles is 8192 cycles/64ms;(13)operating case temperature range is 0 to +95.

The absolute maximum ratings of the EBE21FD4AJFT can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VIN/VOUT,the value is -0.3 to +1.75,the unit is V;(2):the parameter is AMB core power voltage relative to VSS,the symbol is Vcc,the value is -0.3 to +1.75,the unit is V;(3):the parameter is DRAM interface power voltage relative to VSS,the symbol is VDD,the value is -0.5 to +2.30,the unit is V;(4):the parameter is termination voltage relative to VS,the symbol is VTT,the value is -0.5 to +2.30,the unit is V;(5):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +100,the unit is .




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