EBE51UD8ABFA

Features: • 240-pin socket type dual in line memory module (DIMM) -PCB height: 30.0mm -Lead pitch: 1.0mm -Lead-free • 1.8V power supply • Data rate: 533Mbps/400Mbps (max.) • 1.8V (SSTL_18 compatible) I/O • Double-data-rate architecture: two data transfers per clock cy...

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SeekIC No. : 004331053 Detail

EBE51UD8ABFA: Features: • 240-pin socket type dual in line memory module (DIMM) -PCB height: 30.0mm -Lead pitch: 1.0mm -Lead-free • 1.8V power supply • Data rate: 533Mbps/400Mbps (max.) • ...

floor Price/Ceiling Price

Part Number:
EBE51UD8ABFA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 240-pin socket type dual in line memory module (DIMM) 
        -PCB height:  30.0mm 
        -Lead pitch:  1.0mm 
        -Lead-free
• 1.8V power supply
• Data rate: 533Mbps/400Mbps (max.)
• 1.8V (SSTL_18 compatible) I/O
• Double-data-rate architecture: two data transfers per clock cycle
• Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver
• DQS is edge aligned with data for READs: center-aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS 
• Four internal banks for concurrent operation (components)
• Data mask (DM) for write data
• Burst lengths: 4, 8
• /CAS Latency (CL): 3, 4, 5
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• 7.8µs average periodic refresh interval
• Posted CAS by programmable additive latency for better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe operation



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT -0.5 to +2.3 V  
Supply voltage relative to VSS VDD -0.5 to +2.3 V  
Short circuit output current IOS 50 mA  
Power dissipation PD 8 W  
Operating ambient temperature TC 0 to +85 1
Storage temperature Tstg -55 to +100  



Description

The EBE51UD8ABFA is 64M words ×  64  bits,  1  rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package.  Read and write operations are performed at the  cross  points  of  the  CK  and  the  /CK.    This  high-speed  data  transfer EBE51UD8ABFA is  realized  by  the  4  bits  prefetch-pipelined  architecture.    Data  strobe  (DQS  and  /DQS) both for read and write are available for high speed and reliable  data  bus  design.    By  setting  extended  mode register, the on-chip Delay Locked Loop (DLL) can be set  enable  or  disable.    This  module  EBE51UD8ABFA provides  high density  mounting  without  utilizing  surface  mount technology.    Decoupling  capacitors  are  mounted  beside each FBGA (µBGA) on the module board.


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