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EBE82FF4A1RQ

SpecificationsDensity: 8GB Organization -1024M words x 72 bits, 4 ranks Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP (FBGA) -DDP: 2 pieces of 1Gb chips sealed in one package Package -240-pin fully buffered, socket type dual in line memory mod...

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SeekIC No. : 004331062 Detail

EBE82FF4A1RQ: SpecificationsDensity: 8GB Organization -1024M words x 72 bits, 4 ranks Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP (FBGA) -DDP: 2 pieces of 1Gb chips sealed ...

EBE82FF4A1RQ Data Sheet

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Part Number:
EBE82FF4A1RQ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Specifications

  • Density: 8GB
  • Organization
    -1024M words x 72 bits, 4 ranks
  • Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP (FBGA)
    -DDP: 2 pieces of 1Gb chips sealed in one package
  • Package
    -240-pin fully buffered, socket type dual in line memory module (FB-DIMM)
      PCB height: 30.35mm
      Lead pitch: 1.0mm
    -Advanced Memory Buffer (AMB): 655-ball FCBGA
    -Lead-free (RoHS compliant)
  • Power supply
    -DDR2 SDRAM: VDD = 1.8V +/- 0.1V
    -AMB: VCC = 1.5V +0.075V/-0.045
  • Data rate: 667Mbps
  • Eight internal banks for concurrent operation (components)
  • Interface: SSTL_18
  • Burst lengths (BL): 4, 8
  • /CAS Latency (CL): 3, 4, 5
  • Precharge: auto precharge option for each burst access
  • Refresh: auto-refresh, self-refresh
  • Refresh cycles: 8192 cycles/64ms
    -Average refresh period
     7.8 µs at 0'C <= TC <= +85'C
     3.9 µs at +85'C < TC <= +95'C
  • Operating case temperature range
    -TC = 0'C to +95'C



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