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ECH8302-TL-E

MOSFET P-CH 30V 7A ECH8

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SeekIC No. : 003430570 Detail

ECH8302-TL-E: MOSFET P-CH 30V 7A ECH8

ECH8302-TL-E Data Sheet

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Part Number:
ECH8302-TL-E
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 28nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1400pF @ 10V
Power - Max: 1.6W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-SMD, Flat Lead
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Power - Max: 1.6W
Input Capacitance (Ciss) @ Vds: 1400pF @ 10V
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 7A
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: 8-ECH
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V


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