ECH8304-TL-E

MOSFET P-CH 12V 9.5A ECH8

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SeekIC No. : 003430571 Detail

ECH8304-TL-E: MOSFET P-CH 12V 9.5A ECH8

floor Price/Ceiling Price

Part Number:
ECH8304-TL-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 4.5A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3180pF @ 6V
Power - Max: 1.6W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Package / Case: 8-SMD, Flat Lead
Current - Continuous Drain (Id) @ 25° C: 9.5A
Power - Max: 1.6W
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: 8-ECH
Rds On (Max) @ Id, Vgs: 16 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds: 3180pF @ 6V


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