SpecificationsParameter Symbol Rating Unit Note Voltage on any pin relative to VSS VT ñ1.0 to +3.6 V Supply voltage relative to VSS VDD ñ1.0 to +3.6 V Short circuit output current IOS 50 mA Power dissipation PD 1.0 W Operating ambient temperature TA 0 to +70 Storage temperature Tstg ...
EDD2508AKTA-5-E: SpecificationsParameter Symbol Rating Unit Note Voltage on any pin relative to VSS VT ñ1.0 to +3.6 V Supply voltage relative to VSS VDD ñ1.0 to +3.6 V Short circuit output current IOS ...
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Features: Power supply : VDDQ = 2.5V ± 0.2V : VDD = 2.5V ± 0.2V Data rate: 333Mbps/266Mbps (max.)...
SpecificationsDensity: 256M bits Organization -4M words x 16 bits x 4 banks ...
Features: Power supply: VDD, VDDQ = 2.6V ± 0.1V Data rate: 400Mbps (max.) Double Data Rate archite...
The EDD2508AKTA-5 is a 256M bits DDR SDRAM organized as 8,388,608 words × 8 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer EDD2508AKTA-5 is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. It is packaged in 66-pin plastic TSOP (II).