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EDD5116ADTA-5C

Features: * Power supply: VDD ,VDDQ = 2.6V ± 0.1V * Data rate: 400Mbps (max.) * Double Data Rate architecture; two data transfers per clock cycle * Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver * Data inputs, outputs, and DM are synchronized...

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SeekIC No. : 004333783 Detail

EDD5116ADTA-5C: Features: * Power supply: VDD ,VDDQ = 2.6V ± 0.1V * Data rate: 400Mbps (max.) * Double Data Rate architecture; two data transfers per clock cycle * Bi-directional data strobe (DQS) is transmitted /r...

EDD5116ADTA-5C Data Sheet

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Part Number:
EDD5116ADTA-5C
Supply Ability:
5000

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Product Details

Description



Features:

* Power supply:  VDD ,VDDQ = 2.6V ± 0.1V
* Data rate: 400Mbps (max.)
* Double Data Rate architecture; two data transfers per clock cycle 
* Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver 
* Data inputs, outputs, and DM are synchronized with DQS
* 4 internal banks for concurrent operation
* DQS is edge aligned with data for READs; center aligned with data for WRITEs
* Differential clock inputs (CK and /CK)
* DLL aligns DQ and DQS transitions with CK transitions
* Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
* Data mask (DM) for write data
* Auto precharge option for each burst access
* SSTL_2 compatible I/O
* Programmable burst length (BL):  2, 4, 8
* Programmable /CAS latency (CL): 3
* Programmable output driver strength: normal/weak
* Refresh cycles:  8192 refresh cycles/64ms 
- 7.8s maximum average periodic refresh interval
* 2 variations of refresh 
- Auto refresh  
- Self refresh 


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Unit Note
Voltage on any pin relative to VSS VT -1.0 to +3.6 V  
Supply voltage relative to VSS VDD -1.0 to +3.6 V  
Short circuit output current IOS 50 mA  
Power dissipation PD 1.0 W  
Operating ambient temperature TA 0 to +70    
Storage temperature Tstg -55 to +125    



Description

The EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM, organized as 16,777,216 words × 8 bits × 4 banks and 8,388,608 words × 16 bits × 4 banks, respectively.

Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer EDD5108AD and the EDD5116AD is realized by the 2 bits prefetch-pipelined architecture.  Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. They are packaged in standard 66-pin plastic TSOP(II).




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