Features: Highest sustained bandwidth per DRAM device
-2.1 GB/s sustained data transfer rate
-Separate control and data buses for maximized efficiency
-Separate row and column control buses for easy scheduling and highest performance
-32 banks: four transactions can take place simultaneously at full bandwidth data rates
Low latency features
-Write buffer to reduce read latency
-3 precharge mechanisms for controller flexibility
-Interleaved transactions
Advanced power management:
-Multiple low power states allows flexibility in power consumption versus time to active state
-Power-down self-refresh
Organization: 2K bytes pages and 32 banks, x 18
Uses Rambus Signaling Level (RSL) for up to 1066MHz operation
FBGA ( BGA(R)) package is Sn-Pb or lead free solder (Sn-Ag-Cu)
Pinout
Specifications
| Symbol |
Parameter |
MIN. |
MAX. |
Unit |
| VI,ABS |
Voltage applied to any RSL or CMOS pin with respect to GND |
0.3 |
VDD +0.3 |
V |
| VDD,ABS ,VDDa,ABS |
Voltage on VDD and VDDa with respect to GND |
0.5 |
VDD +1.0 |
V |
| TSTORE |
Storage temperature |
50 |
+100 |
°C |
DescriptionThe EDR2518AB (Direct RDRAM(TM)) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The EDR2518AB is 1066MHz 288Mbits Direct Rambus DRAM (RDRAM(R)), organized as 16M words by 18 bits.
The use of Rambus Signaling Level (RSL) technology permits 800MHz to 1066MHz EDR2518AB transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 0.9375ns per two bytes (7.5ns per sixteen bytes).
The architecture of the Direct RDRAM devices EDR2518AB allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM devices 32 banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking. It is offered in a CSP horizontal package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAM devices operate from a 2.5V supply.
EDR2518ABSE Data Sheet
