EDS2516APSA

Features:

• 3.3V power supply
• Clock frequency: 133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length (BL): 1, 2, 4, 8, full page
• 2 variations of burst sequence
-Sequential (BL = 1, 2, 4, 8)
-Interleave (BL = 1, 2, 4, 8)
• Programmable /CAS latency (CL): 2, 3
• Byte control by DQM
: DQM (EDS2508AP)
: UDQM, LDQM (EDS2516AP)
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
- Auto refresh
-Self refresh


Pinout




Specifications

Parameter	Symbol	Rating	Unit
Voltage on any pin relative to VSS	VT	0.5 to VDD + 0.5 ( 4.6 (max.))	V
Supply voltage relative to VSS	VDD	0.5 to +4.6	V
Short circuit output current	IOS	50	mA
Power dissipation	PD	1.0	W
Operating temperature	TA	0 to +70	°C
Storage temperature	Tstg	55 to +125	°C

Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

Description

The EDS2508AP is a 256M bits SDRAM organized as 8,388,608 words * 8 bits * 4 banks. The EDS2516AP is a 256M bits SDRAM organized as 4194304 words * 16 bits * 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 60-ball BGA^®.