EFA025AL

Features: ` +20.0dBm TYPICAL OUTPUT POWER` 11.5dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 250 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY` Idss SORTED IN 5mA PER BIN RANGESpecifications SYMBOLS ...

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EFA025AL Picture
SeekIC No. : 004334436 Detail

EFA025AL: Features: ` +20.0dBm TYPICAL OUTPUT POWER` 11.5dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 250 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFF...

floor Price/Ceiling Price

Part Number:
EFA025AL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

`  +20.0dBm TYPICAL OUTPUT POWER
`  11.5dB TYPICAL POWER GAIN AT 12GHz
`  0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION
`  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
`  Idss SORTED IN 5mA PER BIN RANGE



Specifications

SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
6mA
19dBm
175oC
-65/175oC
880mW
8V
-4V
Idss
1mA
@ 3dB Compression
150oC
-65/150oC
730mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.
          2. Exceeding any of the above ratings may reduce MTTF below design goals.



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