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Part Number: EM39LV800

 

 

 

 

Description: The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800 uses 2.7-3.6V powe...


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EM39LV800 General Description


The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV800 provides a typical Word-Program time of 14 sec and a typical Sector/Block-Erase time of 18 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM39LV800 conforms with the JEDEC standard pin outs for x16 memories. The EM39LV800 is offered in package types of 48-ball FBGA, 48-pin TSOP, and known good dice (KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information).

The EM39LV800 devices are developed for applications that require memories with convenient and economical updating of program, data or configuration, e.g., DVD player, DVD R/W, WLAN, Router, Set-Top Box, etc.

EM39LV800 Maximum Ratings

Temperature Under Bias ............................................................   55 to 125
Storage Temperature .................................................................. 65 to 150
D.C. Voltage on Any Pin to Ground Potential ..........................0.5 V to VDD+0.5V
Transient Voltage (<20ns) on Any Pin to Ground Potential .....2.0V to VDD +2.0V
Voltage on A9 Pin to Ground Potential.........................................  0.5 V to 13.2V
Package Power Dissipation Capability (Ta=25°C)........................ ................ .1.0W
Surface Mount Lead Soldering Temperature (3 Seconds)..............................  240
Output Short Circuit Current * ....................................................................  50mA

EM39LV800 Features

`Single Power Supply
   Full voltage range from 2.7 to 3.6 volts
   for both read and write operations
`Sector-Erase Capability
   Uniform 2Kword sectors
`Block-Erase Capability
   Uniform 32Kword blocks
`Read Access Time
   Access time: 55, 70 and 90 ns
`Power Consumption
   Active current: 20 mA (Typical)
   Standby current: 2 A (Typical)
`Erase/Program Features
   Sector-Erase Time: 18 ms (Typical)
   Block-Erase Time: 18 ms (Typical)
   Chip-Erase Time: 45 ms (Typical)
   Word-Program Time: 14s (Typical)
   Chip Rewrite Time: 8 seconds (Typical)
􀂄 Automatic Write Timing
   Internal VPP Generation
`End-of-Program or End-of-Erase
   Detection
   Data# Polling
   Toggle Bit
`CMOS I/O Compatibility
`JEDEC Standard
   Pin-out and software command sets
   compatible with single-power supply Flash
   memory
`High Reliability
   Endurance cycles: 100K (Typical)
   Data retention: 10 years
`Package Option
   48-pin TSOP
   48-pin FBGA

EM39LV800 Connection Diagram

EM39LV800  Connection Diagram

EM39LV800 datasheet

EM39LV800
PDF/DataSheet Download

  • Datasheet: EM39LV800
  • File Size: 302707 KB
  • Manufacturer: EMC [ELAN Microelectronics Corp]
  • Click here to Download

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