EM565168

Features:

• Organized as 512K words by 16 bits
• Fast Cycle Time : 55ns, 70ns
• Standby Current : 100uA
•Deep power-down Current : 10uA (Memory cell data invalid)
• Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
• Compatible with low power SRAM
• Single Power Supply Voltage : 3.0V±0.3V
• Package Type : 48-ball FBGA, 6x8mm
• Lead Free Package available - EM565168BC-XXG, (G : indicates Lead Free Package)


Specifications

Supply voltage, V_{CC ..................................} -0.2 to +3.6V
Input voltages, VI_{N ...................................} -0.2 to V_CC + 0.3V
Input and output voltages, V_IN, V_{OUT ......} -2.0 to +3.6V*
Output short circuit current I_{SH ................} 100 mA
Operating temperature, T_{A ......................} -25 to +85°C
Storage temperature, T_{STRG ...................} -65 to +125°C
Soldering Temperature (10s), T_{SOLDER ...} 260°C
Power dissipation, P_{D .............................} 1 W

Note:
Absolute maximum DC requirements contains stress ratings only. Functional operation at the absolute maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect device reliability.


Description

The EM565168 is a 8M-bit Pseudo SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This device operates from a single power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the device, and output enable (OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed wide operating range, the EM565168 can be used in environments exhibiting extreme temperature conditions.