MOSFET 2N-CH 30V .1A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A |
| Resistance Drain-Source RDS (on) : | 7 Ohms | Configuration : | Dual |
| Mounting Style : | SMD/SMT | Package / Case : | EMT-6 |
| Packaging : | Reel |
| Technical/Catalog Information | EM6K1T2R |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100mA |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
| Input Capacitance (Ciss) @ Vds | 13pF @ 5V |
| Power - Max | 150mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | EMT6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | EM6K1T2R EM6K1T2R EM6K1T2RTR ND EM6K1T2RTRND EM6K1T2RTR |