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EMF5XV6T5G

Transistors Bipolar (BJT) BRT Dual NPN & PNP

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SeekIC No. : 00208692 Detail

EMF5XV6T5G: Transistors Bipolar (BJT) BRT Dual NPN & PNP

EMF5XV6T5G Data Sheet

floor Price/Ceiling Price

US $ .07~.08 / Piece | Get Latest Price
Part Number:
EMF5XV6T5G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~4900
  • 4900~5000
  • 5000~8000
  • 8000~10000
  • Unit Price
  • $.08
  • $.08
  • $.08
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V, 12 V
Emitter- Base Voltage VEBO : 6 V at TR 2 Maximum DC Collector Current : 0.1 A, 0.5 A
DC Collector/Base Gain hfe Min : 80 at 5 mA at 10 V Configuration : Dual
Mounting Style : SMD/SMT Package / Case : SOT-563
Packaging : Reel    

Description

Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Dual
Package / Case : SOT-563
DC Collector/Base Gain hfe Min : 80 at 5 mA at 10 V
Collector- Emitter Voltage VCEO Max : 50 V, 12 V
Emitter- Base Voltage VEBO : 6 V at TR 2
Maximum DC Collector Current : 0.1 A, 0.5 A


Parameters:

Technical/Catalog InformationEMF5XV6T5G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN Prebiased, 1 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Current - Collector (Ic) (Max)100mA, 1A
Power - Max500mW
Resistor - Base (R1) (Ohms)47K
Resistor - Emitter Base (R2) (Ohms)47K
Vce Saturation (Max) @ Ib, Ic250mV @ 300A, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 270 @ 10mA, 2V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EMF5XV6T5G
EMF5XV6T5G
EMF5XV6T5GOSTR ND
EMF5XV6T5GOSTRND
EMF5XV6T5GOSTR



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