EMX1DXV6T5

Transistors Bipolar (BJT) 100mA 60V Dual NPN

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SeekIC No. : 00214096 Detail

EMX1DXV6T5: Transistors Bipolar (BJT) 100mA 60V Dual NPN

floor Price/Ceiling Price

Part Number:
EMX1DXV6T5
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 120 at 2 mA at 6 V Configuration : Dual
Maximum Operating Frequency : 180 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-563-6
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Configuration : Dual
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 180 MHz
DC Collector/Base Gain hfe Min : 120 at 2 mA at 6 V
Package / Case : SOT-563-6


Features:

• Reduces Board Space
• High hFE, 210−460 (Typical)
• Low VCE(sat) , < 0.5 V
• These are Pb−Free Devices



Specifications

Rating

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

60

Vdc

Collector-Emitter Voltage

V(BR)CEO

50

Vdc

Emitter-Base Voltage

V(BR)EBO

7.0

Vdc

Collector Current − Continuous

IC

100

mAdc




Description

This EMX1DXV6T5 NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.




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