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Part Number: EN25F80
Description: The EN25F80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection mechanisms, a...
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EN25F80
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General Description
EN25F80 General Description
The EN25F80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25F80 is designed to allow either single Sector at a time or full chip erase operation. The EN25F80 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector.
EN25F80 Maximum Ratings
| Parameter | Value | Unit |
| Storage Temperature | -65 to +125 | °C |
| Plastic Packages | -65 to +125 | °C |
| Output Short Circuit Current1 | 200 | mA |
| Input and Output Voltage (with respect to ground) 2 | -0.5 to +4.0 | V |
| Vcc | -0.5 to +4.0 | V |
Notes:
1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, inputs may undershoot Vss to 1.0V for periods of up to 50ns and to 2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.
EN25F80 Features
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 8 Mbit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 A typical power down current
• Uniform Sector Architecture:
- 256 sectors of 4-Kbyte
- 16 blocks of 64-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical
- Block erase time 800ms typical
- Chip erase time: 10 Seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature Range
- Full voltage range: 2.7-3.6 volt
• 8 Mbit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 A typical power down current
• Uniform Sector Architecture:
- 256 sectors of 4-Kbyte
- 16 blocks of 64-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical
- Block erase time 800ms typical
- Chip erase time: 10 Seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature Range
EN25F80 Connection Diagram
EN25F80-75QC
PDF/DataSheet Download
- Datasheet: EN25F80-75QC
- File Size: 465799 KB
- Manufacturer: EON [Eon Silicon Solution Inc.]
- Click here to Download
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