Purchase EN29F002N, In-stock EN29F002N From SeekIC.
Part Number: EN29F002N
Description: The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.Organized into...
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EN29F002N
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DataSheet
General Description
EN29F002N General Description
The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with
top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main
sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002 /
EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate
the need for WAIT states in high-performance microprocessor systems.
The EN29F002 / EN29F002N has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE) controls which eliminate bus contention issues. This device is designed to allow either single sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each sector.
EN29F002N Maximum Ratings
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . 65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . 55°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . 0.5 V to 7.0 V
A9, OE# (Note 2) . . . . . . . . . . . . . . . 0.5 V to 11.5 V
All other pins (Note 1) . . . . . . . . . . . . 0.5 V to Vcc+0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . 200 mA
Plastic Packages . . . . . . . . . . . . . . . 65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . 55°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . 0.5 V to 7.0 V
A9, OE# (Note 2) . . . . . . . . . . . . . . . 0.5 V to 11.5 V
All other pins (Note 1) . . . . . . . . . . . . 0.5 V to Vcc+0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . 200 mA
EN29F002N Features
5.0V ± 10% for both read/write operation
Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
Sector Architecture:
One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors
Boot Block Top/Bottom Programming
Architecture
High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program / erase current
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle bits feature
Hardware RESET Pin (n/a for EN29F002N)
Single Sector and Chip Erase
Sector Protection / Temporary Sector Unprotect (RESET = VID)
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another sector during Erase Suspend Mode
0.4 µm double-metal double-poly triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
Commercial and Industrial Temperature Ranges
Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
Sector Architecture:
One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors
Boot Block Top/Bottom Programming
Architecture
High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program / erase current
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle bits feature
Hardware RESET Pin (n/a for EN29F002N)
Single Sector and Chip Erase
Sector Protection / Temporary Sector Unprotect (RESET = VID)
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another sector during Erase Suspend Mode
0.4 µm double-metal double-poly triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
Commercial and Industrial Temperature Ranges
EN29F002N Connection Diagram
EN29F002N
PDF/DataSheet Download
- Datasheet: EN29F002N
- File Size: 273542 KB
- Manufacturer: ETC
- Click here to Download
- ·EN201D-05A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-07A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-10A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-14A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-20A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN2-1H1
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
- ·EN2-1H1S
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
- ·EN2-1H1ST
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
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