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Part Number: EN29GL064

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Description: The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It featur...


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EN29GL064 General Description


The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.This makes the device ideal for today's embedded applications that require higher density, better performance and lower power consumption

Features of the EN29GL064 are:(1)suspend and resume commands for program and erase operations; (2)write operation status bits indicate program and erase operation completion; (3)support for CFI (common flash interface); (4)persistent methods of advanced sector protection; (5)minimum 100K program/erase endurance cycles; (6)8-word/16-byte page read buffer; (7)16-word/32-byte write buffer reduces overall programming time for multiple-word updates.

The absolute maximum ratings of the EN29GL064 can be summarized as:(1)storage temperature:-65 to 150;(2)ambient temperature with power applied:-55 to 125;(3)output short circuit current:200mA;(4)voltage with respect to ground Vcc:-0.5 to 4.0 V.Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability.EN29GL064 is 64 Mb, 3.0-volt-only, page mode Flash devices optimized for today's embedded designs that demand a large storage array and rich functionality. This product offers uniform 32 Kword (64 KB) uniform sectors and Top or Bottom boot sectors device (for 48-pin TSOP only offer Top or Bottom boot sectors device).The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations in any or all sectors and can be implemented through software and/or hardware methods, which are independent of each other. This section describes the various methods of protecting data stored in the memory array.

EN29GL064 datasheet

EN201D-05A
PDF/DataSheet Download

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