Purchase EN29LV160J, In-stock EN29LV160J From SeekIC.
Part Number: EN29LV160J
Description: The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized...
- Table of contents:
EN29LV160J
-
Suppliers
DataSheet
General Description
EN29LV160J General Description
The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10s. The EN29LV160J features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160J has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.
EN29LV160J Features
` 3.0V, single power supply operation
- Minimizes system level power requirements
` Manufactured on 0.28 m process technology
` High performance
- Access times as fast as 70 ns
` Low power consumption (typical values at 5MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 mA typical standby current (standard access time to active mode)
` Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
` High performance program/erase speed
- Byte program time: 8s typical
- Sector erase time: 200ms typical
- Chip erase time: 3.5s typical
` JEDEC Standard program and erase commands
` JEDEC standard DATA polling and toggle bits feature
` Single Sector and Chip Erase
` Sector Unprotect Mode
` Embedded Erase and Program Algorithms
` Erase Suspend / Resume modes:
Read and program another Sector during Erase Suspend Mode
` 0.28 m double-metal double-poly triple-well CMOS Flash Technology
` Low Vcc write inhibit < 2.5V
` >100K program/erase endurance cycle
` 48-pin TSOP (Type 1)
` Commercial Temperature Range
- Minimizes system level power requirements
` Manufactured on 0.28 m process technology
` High performance
- Access times as fast as 70 ns
` Low power consumption (typical values at 5MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 mA typical standby current (standard access time to active mode)
` Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
` High performance program/erase speed
- Byte program time: 8s typical
- Sector erase time: 200ms typical
- Chip erase time: 3.5s typical
` JEDEC Standard program and erase commands
` JEDEC standard DATA polling and toggle bits feature
` Single Sector and Chip Erase
` Sector Unprotect Mode
` Embedded Erase and Program Algorithms
` Erase Suspend / Resume modes:
Read and program another Sector during Erase Suspend Mode
` 0.28 m double-metal double-poly triple-well CMOS Flash Technology
` Low Vcc write inhibit < 2.5V
` >100K program/erase endurance cycle
` 48-pin TSOP (Type 1)
` Commercial Temperature Range
EN29LV160J Connection Diagram
EN29LV160JB70S
PDF/DataSheet Download
- Datasheet: EN29LV160JB70S
- File Size: 271190 KB
- Manufacturer: ETC [ETC]
- Click here to Download
- ·EN201D-05A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-07A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-10A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-14A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-20A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN2-1H1
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
- ·EN2-1H1S
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
- ·EN2-1H1ST
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
EN29LV160J Relative Products
EN29GL064
The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed in one operation, resulting in faster effective programming...
EN29F800
The EN29F800 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10s. The EN29F800 features 5.0V voltage read and write operation, with access tim...
EN29F512
The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs...
EN29F080
The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10s. Th...
EN29F040A
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10&micr...
EN29F040
The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µ...
Hotspot Suppliers Product
INA101CG
Price: 35.5-38.5 USD
INSTRUMENTATION AMPLIFIER, 45 uV OFFSET-MAX, 0.3 MHz BAND WIDTH, CDIP14
MAX8511EXK18-T
Price: 0.5-0.65 USD
Ultra-Low-Noise, High PSRR, Low-Dropout, 120mA Linear Regulator, SOT353, Overcurrent and Thermal P...
XCR3064XL-7VQ44I
Price: 1.5-2 USD
64 Macrocell CPLD, QFP, Lowest power, 5.5 ns pin-to-pin logic delays, Optimized for 3.3V systems, ...
LAH100-P
Price: 9-10 USD
Current Transducer, IGBT, LEM, 100A, Closed loop (compensated) current, Insulated plastic case
EPF6016AQC208-2N
Price: 3-5 USD
Programmable Logic Device, QFP208, Low power consumption, low cost, 3.3V
2SK70
Price: 10-12 USD
N-channel, MOS, Field Effect Power transistor, TO-3 , 4 V, ±6A, NEC
GT-48300-B-1
Price: 2-5 USD
GT-48300-B-1, BGA, 1.5V to 6V, 6W, GalileoTechnology
SD-N21
Price: 48-55 USD
Mitsubishi elevator relay contactor SD-N21
GSET1000SV1.22-3.2
Price: 1-3 USD
TQFP128, GSET1000SV1.22-3.2, Siemens Semiconductor Group
AT89C51ED2-SLSUM
Price: 7-10 USD
8-bit, microcontroller, PLCC
PBSS5160T
Price: 0.07-0.08 USD
PNP transistor, 60V, 1A, SOT23, 400mW, 220MHz, PBSS5160T
LLS1H222MELZ
Price: 1.2-2 USD
aluminum electrolytic capacitor, 2200μF, 50V, Snap-in Terminal Type, Through Hole
