EN29LV320

The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8s. The EN29LV320 features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.

Features of the EN29LV320 are: (1)unlock bypass program command supported; (2)erase suspend / resume modes: read and program another sector during erase suspend mode; (3)support JEDEC common flash interface(CFI); (4)low Vcc write inhibit < 2.5V; (5)minimum 100K program/erase endurance cycles.The EN29LV320 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.

The absolute maximum ratings of the EN29LV320 can be summarized as:(1)storage temperature:-65 to 125;(2)plastic packages:-65 to 125;(3)output short circuit current:200mA;(4)voltage with respect to ground:-0.5 to Vcc+0.5 V;(5)Vcc:-0.5 to 4.0V.Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability.The EN29LV320 has a automatic sleep mode, which minimizes power consumption. The devices will enter this mode automatically when the states of address bus remain stable for tacc + 30ns. ICC4 in the DC Characteristics table shows the current specification. With standard access times, the device will output new data when addresses change.