MFG:Other Category:Other
Category: Other
MFG: Other
Description: The EN29LV320AT-70TIP is designed as a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized...
The EN29LV320AT-70TIP is designed as a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8s. It features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.
EN29LV320AT-70TIP has many features and some are listed here. (1) Single power supply operation which means full voltage range: 2.7 to 3.6 volts read and write operations. (2) high performance. (3) Low power consumption (typical values at 5MHz). (4) Flexible sector architecture. (5) High performance program/erase speed. (6) JEDEC standard compatible. (7) Standard DATA# polling and toggle bits feature. (8) Unlock Bypass Program command supported. (9) Erase suspend / resume modes: read and program another sector during erase suspend mode. (10) Support JEDEC common flash interface (CFI). (11) Low Vcc write inhibit < 2.5V. (12) minimum 100K program / erase endurance cycles. And so on.
Some absolute maximum ratings of EN29LV320AT-70TIP have been concuded into several points as follow. (1) Its storage temperature range would be from -65°C and max +125°C. (2) Its plastic packages would be from -65°C to +125°C. (3) Its ambient temperature with power applied would be from -55°C to +125°C. (4) Its output short circuit current would be 200mA. (5) Its voltage with respect to ground would be from -0.5V to 11.5V for A9, OE#, RESET# and WP#/ACC2 and it would be from -0.5V to Vcc+0.5V for all other pins and it would be from -0.5V to +4.0V for Vcc.
And also some DC characteristics about EN29LV320AT-70TIP. (1) Its input leakage current would be max +/-5uA. (2) Its output leakage current would be max +/-5uA. (3) Its active read current would be typ 9mA and max 16mA. (4) Its supply current (program or erase) would be typ 20mA and max 30mA. (5) Its supply current (standby CMOS) would be typ 1uA and max 5.0uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
EN201D-05A
PDF/DataSheet Download
The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8s. The EN29LV320 features 3.0V voltage read and write operation, with access...
The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10s. The EN29LV160J features 3.0V voltage read and write operation, with acc...
The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed in one operation, resulting in faster effective programming...
The EN29F800 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10s. The EN29F800 features 5.0V voltage read and write operation, with access tim...
The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs...
The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10s. Th...
Price: 3.85-4.35 USD
controller IC, TQFP-100, –0.3 to 7.0V, 300 mW, 0.05 μA, S1D13503F01A1
Price: 1-5 USD
low power transceiver, 2FSK, 3FSK, 4FSK, MSK, 48-Lead LFCSP
Price: 20-25 USD
NPN SILICON, RF POWER TRANSISTOR, 18 dB min, -30 dBc max, 10 A, 60 V, 35 V, 140 W PDISS
Price: 1.7-3.6 USD
MOSFET, N-CH, 500V, 12A, TO220FP, 0.3W, 0.30Ω, High dv/dt, avalanche capabilitues
Price: 3.85-4.85 USD
CMOS, 330 MHz Triple 8-Bit High Speed Video DAC，IC DAC VIDEO 3-CH 140MHZ 48LQFP - ADV7125KSTZ140
Price: 0.55-0.6 USD
2 poles, 1 to 2 A, relay, Gold overlay silver alloy, 50 mW, Extremely low profile, low light weight
Price: 2-2.3 USD
Quad Voltage Controlled Amplifier, SOP16, ±18 V, No External Trimming
Price: 1-2 USD
45 V, 100 mA, NPN general-purpose transistor, SOT23, Low current, Low voltage
Price: 0.1-100 USD
Chip Inductor, SMD, 10.0 μH Inductance, 300 mΩ, 26.0 MHz, Lead Free, Surface Mount, RoHS Compliant
Price: 3.15-3.32 USD
adjustable 3-terminal positive voltage regulator, TO-3, 35V, 7 A peak output current, thermal regu...
Price: 10-20 USD
24SOIC, Galibrated Quad 12-Bit Voltage-Output D/A Converter, double-buffered digital inputs
Price: 0.001-8 USD
High Current Inductor, SMD, Low Profile
