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Part Number: ES62UL256

 

 

 

 

Description: The ES62UXX256 is an integrated memory device containing a low power 256 Kbit Static Random Access Memory organized as ...


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ES62UL256 General Description


The ES62UXX256 is an integrated memory device containing a low power 256 Kbit Static Random Access Memory organized as 32,768 words by 8 bits. The device is fabricated using an advanced CMOS process and NanoAmp's high-speed/low-power circuit technology. This device is also designed for very low voltage operation making it quite suitable for battery powered devices having both very low operating and standby currents.  The device pinout is compatible with other standard 32k x 8 SRAMs. The ES62UXX256 comes in two speed grades (45 and 25 nsec) and two very broad voltage ranges.

ES62UL256 Maximum Ratings

Item Symbol Rating Unit
Voltage on any pin relative to VSS
VIN,OUT 0.3 to VCC +0.3
V
Voltage on VCC Supply Relative to VSS
VCC 0.3 to 4.0 V
Power Dissipation PD 500 mW
Storage Temperature TSTG 40 to 125  
Operating Temperature TA -20 to +80  
Soldering Temperature and Time TSOLDER 260 C, 10sec (Lead only)  

ES62UL256 Features

Operating Voltage 
   1.5 to 3.6 Volts
Extended Temperature Range
   -20to +80
Fast Cycle Time
  TACC < 25 nS @ 3V
Very Low Operating Current  
  ICC < 0.8 mA typical at 2V, 1 Mhz
Very Low Standby Current  
  ISB = 50 nA typical 

ES62UL256 Connection Diagram

ES62UL256  Connection Diagram

ES62UL256 datasheet

ES62UL256
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