F0522501Q

Features:

• Up to 2.7 Gb/s (FEC available) high speed operation
• Clocked (MS-D/FF) or Non-clocked operation can be selected
• Disable function of modulation current and bias current
• Bias current monitoring
• Mark density monitoring
• +5 V or -5 V single power supply
• Up to 60 mA p-p modulation current
• Up to 50 mA bias current
• Differential ECL compatible interface
• On-chip 50 Ω terminations
• Internal voltage reference for AC coupling


Application

• Laser diode driver of an optical transmitter circuit up to 2.7 Gb/s (FEC available)


Pinout




Specifications

Parameter	Symbol	Value	Units
Supply Voltage	VDD- VSS	-0.5 + 7.0	V
Supply Current	Icon	250	mA
Input Voltage(DIN,DINB,CKIN,CKINB)	VIN	VSS to VDD+0.5	V
Input Voltage(DISIN,SELIN)	VINC1	VSS to VDD+0.5	V
Input Voltage(VMIN,VBIN)	VINC2	VSS to VDD+1.5	V
Output Voltage(OUT,UOTB,OUTBIAS)	VOUT	VDD-20 to VDD+0.5	V
Output Voltage(MRK,MRKB,BM,BMB)	VOUTM	VSS to VDD+0.5	V
Termination Voltage(VTTD,VTTCK)	VTT	VDD-2.5 to VDD+0.5	V
Stprage Temperature	Tstg	-55 to + 125
Ambient Operating Temperature	Ta	0 to +70

Description

The F0522501Q is a high performance GaAs laser diode driver IC applicable in an optical transmitter circuit up to 2.7 Gb/s NRZ data rate (especially suitable for SDH [STM-16] / SONET [OC-48]) , featuring the capable operation for the FEC signal.

The F0522501Q specifies the rise time and the fall time of 70 ps (20 %-80 %) typically. It features the single +5 V or -5 V supply operation, the modulation current between 1 mA and 60 mA, and the bias current between 1 mA and 50 mA while the dissipating power is around the typical value of 1 W.