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Part Number: F1535

 

 

 

 

Description: Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, ...


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F1535 General Description


Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance

F1535 Maximum Ratings

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
80 Watts
2.1/W
200
-65 to 150
6.4 A
70V
70V
30V

F1535 datasheet

F1535
PDF/DataSheet Download

Find F1535 Suppliers

  • ·F1510
  • POLYFET [Polyfet RF Devices] 
  • PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR  
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  • ·F1516
  • POLYFET [Polyfet RF Devices] 
  • PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR  
  • 38566 KB
  • F1516 Datasheet Download
  • ·F1520
  • POLYFET [Polyfet RF Devices] 
  • PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR  
  • 37303 KB
  • F1520 Datasheet Download

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