F2212

PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 40Watts 4.2/W 200 -65 to 150 3.2A 50 V 50 V 30VDescriptionSilicon VDM...

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F2212 Picture
SeekIC No. : 004339971 Detail

F2212: PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gat...

floor Price/Ceiling Price

Part Number:
F2212
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/3/28

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Product Details

Description



Pinout






Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
40Watts 4.2/W 200
-65 to 150
3.2A 50 V 50 V 30V





Description

Silicon VDMOS and LDMOS transistors F2212 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" TM process F2212 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance






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