FC40SA50FKP

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : SOT-227
Resistance Drain-Source RDS (on) : 0.1 Ohms


Description

The FC40SA50FKP is designed as one kind of Power MOSFETs with current of 40A. Its typical applications include switch mode power supply (SMPS), uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.

FC40SA50FKP has eight features. (1)Low gate charge Qg results in simple drive requirement. (2)Improved gate, avalanche and dynamic dV/dt ruggedness. (3)Fully characterized capacitance and avalanche voltage and current. (4)Low Rds(on). (5)Fully insulated package. (6)UL pending. (7)Compliant to RoHS directive 2002/95/EC. (8)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of FC40SA50FKP have been concluded into several points as follow. (1)its continuous drain current, Vgs at 10V would be 40A at Tc=25°C and would be 26A at Tc=100°C. (2)Its pulsed drain current would be 160A. (3)Its power dissipation would be 430W. (4)Its linear derating factor would be 3.45W/°C. (5)Its gate to source voltage would be +/-30V. (6)Its peak diode recovery dV/dt would be 9.0V/ns. (7)Its operating junction and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics of FC40SA50FKP are concluded as follow.(1)Its drain to source breakdown voltage would be min 500V. (2)Its breakdown voltage temperature coefficient would be typ 0.60V/°C. (3)Its static drain to source on-resistance would be typ 0.084 and max 0.10. (4)Its gate threshold voltage would be min 3.0V and max 5.0V. (5)Its drain to source leakage current would be max 50A at Vds=500V, Vgs=0V and would be max 250A at Vds=400V, Vgs=0V, Tj=125°C. (6)Its gate to source forward leakage would be max 250nA. (7)Its gate to source reverse leakage current would be max -250nA. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!