FCA16N60N

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.17 Ohms


Pinout




Description

The FCA16N60N is N-Channel enhancement mode power field effect transistor. It employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

The features of FCA16N60N can be summarized as:(1)RDS(on) = 0.17 ( Typ.) @  VGS = 10V, ID = 8A; (2)Ultra Low gate charge ( typical Qg= 40.2 nC); (3)low effective output capacitance; (4)100% avalanche tested; (5)RoHS Compliant.

The absolute maximum ratings of FCA16N60N are:(1)Drain to Source Voltage:600 V; (2)Gate to Source Voltage:±30 V; (3)Drain Current:Continuous (TC = 25°C)..16.0A, Continuous (TC = 100°C)..10.1A,Pulsed..48.0A; (4)Single Pulsed Avalanche Energy:355 mJ; (5)Avalanche Current:5.3 A; (6)Repetitive Avalanche Energy:1.34 mJ; (7)Peak Diode Recovery dv/dt:20 V/ns; (8)Power Dissipation(TC = 25°C):134.4 W,Derate above 25°C..1.08 W/°C; (9) Operating and Storage Temperature Range:-55°C to +150°C; (10)Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds:300°C.

The electrical characteristics of the FCA16N60N are:(1)drain to source breakdown voltage:600V;(2)gate to body leakage current:±100nA;(3)gate  threshold voltage:2.0V to 4.0V;(4)input capacitance:1630pF to 2170pF;(5)output capacitance:70F to 95pF;(6)turn-on delay time:15.8ns to 41.6ns;(7)turn-off delay time:60.3ns to 130.6ns;(8)rise time:15.5ns to 41.0ns;(9)fall time:20.2ns to 50.4ns.

If you want to know more information such as the electrical characteristics about the FCA16N60N, please download the datasheet in www.seekic.com or www.chinaicmart.com .