Position: Home  > All Categories> Integrated Circuits (ICs) > FCB11N60

FCB11N60

Features: • 650V @TJ = 150°C• Typ. RDS(on) = 0.32Ω• Ultra low gate charge (typ. Qg = 40nC)• Low effective output capacitance (typ. Coss.eff = 95pF)• 100% avalanche testedSpecifications Symbol Parameter FQD10N20C / FQU10N20C Units VDSS Drain-Sour...

product image

FCB11N60 Picture
See larger image
SeekIC No. : 004340828 Detail

FCB11N60: Features: • 650V @TJ = 150°C• Typ. RDS(on) = 0.32Ω• Ultra low gate charge (typ. Qg = 40nC)• Low effective output capacitance (typ. Coss.eff = 95pF)• 100% avalanch...

FCB11N60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FCB11N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32Ω
• Ultra low gate charge (typ. Qg = 40nC)
• Low effective output capacitance (typ. Coss.eff = 95pF)
• 100% avalanche tested


Specifications

Symbol Parameter
FQD10N20C / FQU10N20C
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
11
7
A
A
IDM Drain Current - Pulsed (Note 1)
33
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
340
mJ
IAR Avalanche Current (Note 1)
11
A
EAR Repetitive Avalanche Energy (Note 1)
12.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
125
1.0
W
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

FCB11N60 SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This FCB11N60 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
LED Products
LM24P20
KCG057QV1DB-G770
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Line Protection, Backups
BX0023
A20B-1008-0550
Transformers
TM-09210
BV222-1-00992
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
View more