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FCB20N60

Features: • 650V @TJ = 150°C• Typ. RDS(on) = 0.15Ω• Ultra low gate charge (typ. Qg = 75nC)• Low effective output capacitance (typ. Coss.eff = 165pF)• 100% avalanche testedSpecifications Symbol Parameter FCB20N60 Units VDSS Drain-Source Voltage ...

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SeekIC No. : 004340831 Detail

FCB20N60: Features: • 650V @TJ = 150°C• Typ. RDS(on) = 0.15Ω• Ultra low gate charge (typ. Qg = 75nC)• Low effective output capacitance (typ. Coss.eff = 165pF)• 100% avalanc...

FCB20N60 Data Sheet

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Part Number:
FCB20N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 650V @TJ = 150°C
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested


Specifications

Symbol Parameter
FCB20N60
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
20
12.5
A
A
IDM Drain Current - Pulsed (Note 1)
60
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
690
mJ
IAR Avalanche Current (Note 1)
20
A
EAR Repetitive Avalanche Energy (Note 1)
20.8
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
208
1.67
W
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

FCB20N60 SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This FCB20N60 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.




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