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FCP25N60N

MOSFET N-CH 600V TO-220-3

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SeekIC No. : 003432546 Detail

FCP25N60N: MOSFET N-CH 600V TO-220-3

FCP25N60N Data Sheet

floor Price/Ceiling Price

US $ 2.55~2.55 / Piece | Get Latest Price
Part Number:
FCP25N60N
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $2.55
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/16

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Product Details

Quick Details

Series: SupreMOS™ Manufacturer: Fairchild Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 25A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 125 mOhm @ 12.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 74nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3352pF @ 100V
Power - Max: 216W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 74nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 25A
Supplier Device Package: TO-220
Manufacturer: Fairchild Semiconductor
Series: SupreMOS™
Rds On (Max) @ Id, Vgs: 125 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds: 3352pF @ 100V
Power - Max: 216W


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