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FDB050AN06A0

MOSFET 60V N-Ch PowerTrench MOSFET

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SeekIC No. : 00148080 Detail

FDB050AN06A0: MOSFET 60V N-Ch PowerTrench MOSFET

FDB050AN06A0 Data Sheet

floor Price/Ceiling Price

US $ 1.12~1.7 / Piece | Get Latest Price
Part Number:
FDB050AN06A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.7
  • $1.37
  • $1.25
  • $1.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 4.3 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 4.3 mOhms
Package / Case : TO-263
Drain-Source Breakdown Voltage : 60 V


Features:

• rDS(ON) = 4.3mΩ (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 61nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain to Source Voltage
60
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC < 135, VGS = 10V)
80
A
Continuous (TA = 25, VGS = 10V, RJA = 43/W)
18
A
Pulsed
Figure 4
A
EAS Single Pulse Avalanche Energy (Note 1)
470
mJ
PD Power dissipation
245
W
Derate above 25
1.63
W/
TJ, TSTG Operating and Storage Temperature
-55 to 175



Parameters:

Technical/Catalog InformationFDB050AN06A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Power - Max245W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB050AN06A0
FDB050AN06A0



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