FDB060AN08A0

MOSFET Discrete Auto N-Ch PowerTrench

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SeekIC No. : 00152550 Detail

FDB060AN08A0: MOSFET Discrete Auto N-Ch PowerTrench

floor Price/Ceiling Price

US $ 1.24~1.63 / Piece | Get Latest Price
Part Number:
FDB060AN08A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~435
  • 435~500
  • 500~800
  • 800~1000
  • Unit Price
  • $1.63
  • $1.46
  • $1.46
  • $1.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 4.8 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 80 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 4.8 mOhms


Features:

* r DS(ON)  = 4.8m  (Typ.), VGS = 10V, ID  = 80A 
* Qg (tot) = 73nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101



Application

* 42V Automotive Load Control
* Starter / Alternator Systems
* Electronic Power Steering Systems
* Electronic Valve Train Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V systems



Specifications

Symbol

Parameter

Ratings

Units

VDSS

Drain to Source Voltage

75

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current

80

A

Continuous (TC < 1127, VGS = 10V)

Continuous (TC = 25, VGS = 10V, with RJA = 43 /W)

16

A

Pulsed

Figure 4

A

EAS

Single Pulse Avalanche Energy (Note 1)

350

mJ

PD

Power dissipation

255

W

Derate above 25

1.7

W/

TJ , TSTG

Operating and Storage Temperature

-55to
175




Parameters:

Technical/Catalog InformationFDB060AN08A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5150pF @ 25V
Power - Max255W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB060AN08A0
FDB060AN08A0



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