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FDB13AN06A0

MOSFET N-Channel PowerTrench

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SeekIC No. : 00148099 Detail

FDB13AN06A0: MOSFET N-Channel PowerTrench

FDB13AN06A0 Data Sheet

floor Price/Ceiling Price

US $ .7~.98 / Piece | Get Latest Price
Part Number:
FDB13AN06A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.98
  • $.88
  • $.79
  • $.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.0115 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-263
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.0115 Ohms at 10 V


Features:

*rDS(ON)  = 11.5m (Typ.), VGS = 10V, ID = 62A 
*Qg (tot) = 22nC (Typ.), VGS = 10V 
* Low Miller Charge
*Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82555


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol Parameter Ratings Units
VDSS

 Drain to Source Voltage 60 V
VGS
Gate to Source Voltage
±20
 V
ID
 Drain Current
Continuous (TC  = 25, VGS = 10V) 		 62 A
Continuous (TC  = 100, VGS  = 10V) 44 A
Continuous (TA  = 25, VGS = 10V, RJA = 43/W)  10.9 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 56 mJ
PD Power dissipation 115 W
Derate above 25 0.77 W/
TJ , TSTG Operating and Storage Temperature -55 to 175  



Parameters:

Technical/Catalog InformationFDB13AN06A0
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 62A, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max115W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB13AN06A0
FDB13AN06A0
FDB13AN06A0DKR ND
FDB13AN06A0DKRND
FDB13AN06A0DKR



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