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FDB52N20

Features: * 52A, 200V, RDS(on) = 0.049@VGS = 10 V* Low gate charge ( typical 49 nC)* Low Crss ( typical 66 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications Symbol Parameter FDH50N50/FDA50N50 Unit VDSS Drain-Source Voltage 200 V ID Drain Curre...

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FDB52N20: Features: * 52A, 200V, RDS(on) = 0.049@VGS = 10 V* Low gate charge ( typical 49 nC)* Low Crss ( typical 66 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications Sy...

FDB52N20 Data Sheet

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Part Number:
FDB52N20
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* 52A, 200V, RDS(on)  = 0.049 @VGS  = 10 V
* Low gate charge ( typical 49 nC)
* Low Crss  ( typical  66 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol Parameter FDH50N50/FDA50N50 Unit
VDSS Drain-Source Voltage 200 V
ID Drain Current    - Continuous (TC = 25) 
                 - Continuous (TC = 100)		 52
33		 A
A
IDM  
Drain Current    - Pulsed                (Note 1)		 208 A
VGSS Gate-Source voltage 30
±
 V
EAS
Single Pulsed Avalanche Energy      (Note 2)		 2520 mJ
IAR Avalanche Current                           (Note 1) 52 A
EAR Repetitive Avalanche Energy           (Note 1) 35.7 mJ
dv/dt Peak Diode Recovery dv/dt             (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25) 
- Derate above 25		 357
2.86		 W
W/ 
TJ,TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds		 300   



Description

  These FDB52N20 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

  This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDB52N20 are well suited for high effi-cient switched mode power supplies and active power factor correction.




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