MFG:FAIRC Package Cooled:TO-263(D2PAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-263(D2PAK)
D/C: 09+
Description: These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's...
These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.
| Symbol | Parameter | FDH50N50/FDA50N50 | Unit |
| VDSS | Drain-Source Voltage | 200 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
52 33 |
A A |
| IDM | Drain Current - Pulsed (Note 1) |
208 | A |
| VGSS | Gate-Source voltage | 30 ± |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
2520 | mJ |
| IAR | Avalanche Current (Note 1) | 52 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 35.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
357 2.86 |
W W/ |
| TJ,TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds |
300 |
FDB52N20
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