FDB8030L

MOSFET N-Ch PowerTrench Logic Level

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SeekIC No. : 00147440 Detail

FDB8030L: MOSFET N-Ch PowerTrench Logic Level

floor Price/Ceiling Price

US $ 1.66~2.51 / Piece | Get Latest Price
Part Number:
FDB8030L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Unit Price
  • $2.51
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  • Processing time
  • 15 Days
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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 80 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.0035 Ohms at 10 V


Features:

*  80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V
                      RDS(ON) = 0.0045 @ VGS = 4.5 V
*  Critical DC electrical parameters specified at elevated temperature
*  Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
*  High performance trench technology for extremely low RDS(ON)
* 175°C maximum junction temperature rating
 


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage
30 V

VGSS
Gate-Source Voltage
±20
V
ID Drain Current Continuous (Note 1)
Pulsed (Note 1)
80 A
300
PD Total Power Dissipation @# TC = 25
Derate above 25
187 W
1.25 W
TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275



Description

  This FDB8030L N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or

  These MOSFETS FDB8030L feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.

  The result is a MOSFET FDB8030L that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDB8030L
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.5 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 10500pF @ 15V
Power - Max187W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs170nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8030L
FDB8030L
FDB8030LDKR ND
FDB8030LDKRND
FDB8030LDKR



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