MOSFET N-Ch PowerTrench Logic Level
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
| Resistance Drain-Source RDS (on) : | 0.0035 Ohms at 10 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263 | Packaging : | Reel |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage |
30 | V |
VGSS |
Gate-Source Voltage | ±20 |
V |
| ID | Drain Current Continuous (Note 1) Pulsed (Note 1) |
80 | A |
| 300 | |||
| PD | Total Power Dissipation @# TC = 25 Derate above 25 |
187 | W |
| 1.25 | W | ||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -65 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
This FDB8030L N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
These MOSFETS FDB8030L feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.
The result is a MOSFET FDB8030L that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
| Technical/Catalog Information | FDB8030L |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 10500pF @ 15V |
| Power - Max | 187W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 170nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB8030L FDB8030L FDB8030LDKR ND FDB8030LDKRND FDB8030LDKR |