FDD068AN03L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.0057 Ohms
Package / Case : TO-252AA


Features:

• r_DS(ON) = 5.7mΩ (Typ.), V_GS = 4.5V, I_D = 35A
• Qg(5) = 24nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters


Specifications

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	60 ±20 35 35 17 Figure 4 168 80 0.53W/ -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC < 154°C, VGS = 10V) Continuous (TC < 150°C, VGS = 4.5V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 2)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC RJA RJA

Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

1.88 100 52

°C/W °C/W °C/W

Parameters:

Technical/Catalog Information	FDD068AN03L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2525pF @ 15V
Power - Max	80W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD068AN03L FDD068AN03L