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FDD5614P

MOSFET 60V P-Ch PowerTrench

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FDD5614P: MOSFET 60V P-Ch PowerTrench

FDD5614P Data Sheet

floor Price/Ceiling Price

US $ .34~.49 / Piece | Get Latest Price
Part Number:
FDD5614P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.49
  • $.43
  • $.39
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.076 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Continuous Drain Current : 15 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.076 Ohms


Features:

15 A, 60 V. RDS(ON)  = 100 m @ VGS = 10  V
                            RDS(ON)  = 130 m @ VGS = 4.5 V
  Fast switching speed
High performance trench technology for extremely
    low RDS(ON)
High power and current handling capability


Application

 DC/DC converter
 Power management
 Load switch


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 35 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous (Note 3)
                       Pulsed        (Note 1a)		 -15 A
-45
PD Power Dissipation @TC=25°C (Note 3)
                             @TA=25°C (Note 1a)
                             @TA=25°C (Note 1b)		 42 W
3.8
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This 60V P-Channel MOSFET FDD5614P uses Fairchild's high voltage PowerTrench process.  It has been optimized for power management applications.




Parameters:

Technical/Catalog InformationFDD5614P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs100 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 759pF @ 30V
Power - Max1.6W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD5614P
FDD5614P
FDD5614PCT ND
FDD5614PCTND
FDD5614PCT



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